Analytical models for growth by metal organic vapour phase epitaxy: I. Isothermal models
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چکیده
منابع مشابه
Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications
GaN wires are grown on a Si (111) substrate by metal organic vapour-phase epitaxy on a thin deposited AlN blanket and through a thin SiNx layer formed spontaneously at the AlN/Si interface. N-doped wires are used as templates for the growth of core-shell InGaN/GaN multiple quantum wells coated by a p-doped shell. Standing single-wire heterostructures are connected using a metallic tip and a Si ...
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ژورنال
عنوان ژورنال: Semiconductor Science and Technology
سال: 1990
ISSN: 0268-1242
DOI: 10.1088/0268-1242/5/1/003